Internal circuit and basic structure of CMOS linear regulator
Internal circuit and basic structure
The internal circuit includes a reference voltage source, an error amplifier, a resistor for adjusting the output voltage in advance, and a P-channel MOS transistor for output. In addition, constant current limiting or current limiting circuits (foldback circuits) and overheat shutdown functions are provided as protection functions.
It is difficult to configure a bandgap reference circuit used in a bipolar process in an internal reference voltage of an IC. Most of them use products unique to a CMOS process, and the temperature characteristics of the output voltage are somewhat inferior to those of a bipolar linear regulator.
In addition, the low current consumption type, high-speed type, and low ESR capacitance, etc., can change their own internal phase compensation or circuit configuration. Low-current-consumption types are usually composed of 2-stage amplifiers, while high-speed models are being investigated using 3-stage amplifiers that satisfy both low current consumption and high-speed transient response. Figure 1 shows a high-speed internal circuit diagram.
A buffer amplifier is added between the primary amplifier and the P-channel MOS transistor for output, and the gate capacitance of the output P-channel MOS transistor can be driven at a high speed. The output voltage is determined by R1 and R2; the limited current value is determined by R3 and R4. As each can be fine tuned, good accuracy is set. In particular, the high-speed type is mostly used for radio instruments or portable electronic instruments, and it has miniaturization requirements, and most of them can correspond to low-ESR capacitors such as ceramic capacitors.
Figure 1 Basic Circuitry Block Diagram of High-Speed ​​Type Regulator
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