Toshiba cart with low on-resistance power MOSFET

Toshiba Corp. (Toshiba CorporaTIon) has introduced a low on-resistance power MOSFET, which has also become the latest member of its TO-220SIS package series specifically designed for automotive applications. The new product "TK80A04K3L" also achieves a low leakage current and a guaranteed operating temperature of 175 ° C. This product is not only very suitable for automotive applications, but also for motor drivers and switching regulators.


TO-220SIS package

Main features

1. Low on-resistance (VGS = 10V), RDS (ON) = 1.9mΩ (standard value)

2. Low leakage current IDSS = 10μA (maximum value) (VDS = rated voltage)

3. Channel temperature = 175 ℃ guaranteed working temperature

4. Lead insertion type TO-220SIS package

Package icon

TK80A04K3L TO-220SIS package diagram

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