Growing ROHM's latest power component lineup
Foreword
ROHM, a world-renowned semiconductor manufacturer, is actively promoting the product lineup for industrial equipment by leveraging its technological advantages accumulated in the field of consumer electronics for many years. In the field of semiconductor power components supporting the "energy saving, energy creation, and energy storage" technologies, ROHM has realized the mass production of silicon carbide semiconductors (SiC semiconductors) with breakthrough characteristics that silicon semiconductors cannot obtain. In addition, in the field of traditional silicon semiconductor power components , a composite product group that combines the comprehensive strength of ROHM from discrete semiconductors to full IC coverage has been realized. Some of these products are described below.
Has gradually penetrated into the life of SiC power components
SiC power components are power semiconductors made of compound semiconductor silicon carbide (Silicon carbide) made of carbon and silicon. Because of their excellent performance and advancement, they have been regarded as "ideal components" for many years. Eyes. SiC power components have gradually become the "near" components commonly used in modern daily life. (figure 1)
Figure 1. SiC power components with ever-increasing use in life 
Application case of SiC power components (including some cases in development):
â— "Household SiC" PC power supply, solar power regulator (home), air conditioner, etc.
â— "Industrial SiC" data center, UPS, factory handling robot, high-frequency induction heating equipment (IH), high-frequency power supply, solar power controller (non-family for solar power stations, etc.)
â— "SiC in the town" electric car (car charger), fast charging station, generator, medical diagnostic equipment, etc.
From the research and development of SiC power components to mass production, ROHM has been far ahead of the industry. The following is a brief introduction to the product lineup and characteristics of SiC power components.
1SiC Schottky diode
In the past more than 10 years since the world's first mass production of SiC Schottky diodes in 2001, ROHM became the first manufacturer in Japan to achieve mass production of SiC Schottky diodes in 2010. Now, ROHM is expanding its lineup of second-generation products. Compared with the first generation of the old products, the second generation not only maintains a very short reverse recovery time, but also reduces the forward voltage by 0.15V. (figure 2) 
Figure 2. Forward voltage comparison of SiC Schottky diodes (650V Class 10A)
The product lineup includes 650V and 1200V two-voltage, TO-220 insulated/non-insulated, TO-247 and D2PAK packages. In addition, compared with silicon fast recovery diodes (FRD), the reverse recovery loss can be greatly reduced, so it is widely used in high-frequency circuits from home appliances to industrial equipment (Figure 3). ROHM also has a product that meets the automotive-grade electronic component standard AEC-Q101, and has been widely used in on-board charging circuits for many electric vehicles and plug-in hybrid vehicles in Japan and overseas. 
Figure 3. Comparison of characteristics between SiC Schottky diode and silicon FRD (650V 10A)
2SiC MOSFET
Compared with Schottky diodes, SiC MOSFETs have the problem of deterioration of the body diode induced characteristics (on-resistance of MOSFET, forward voltage rise of the body diode), and the reliability problem has always hindered mass production. The subject of change.
ROHM led the world in mass production of SiC MOSFETs in December 2010 by improving the process and component structure associated with crystal defects.
Now, ROHM is accelerating the development of the second generation of 650V and 1200V withstand voltage.
Compared with silicon IGBTs, which are widely used as high-voltage-resistant switching elements, SiC MOSFET switching losses have an absolute advantage of only about 1/5, so the equipment required for higher and higher driving frequencies is miniaturized (filters) The miniaturization and miniaturization of the cooling mechanism and the improvement of power conversion efficiency have been remarkable. (Figure 4) 
Figure 4. Comparison of switching losses between Si-IGBT and SiC MOSFET
3SiC power module
ROHM quickly developed a "full SiC" power module with built-in power components consisting entirely of SiC power components, and was put into mass production in 2012. So far, two power modules rated at 1200V 120-180A have been mass-produced in ROHM's internal production line. In addition, the power module rated at 1200V 300A is expected to be put into mass production in 2014, and plans to continue to expand the range of rated current and rated voltage in the future (Figure 5). These SiC power modules have also been adopted worldwide in conjunction with discrete SiC MOSFETs in industrial-centric applications such as non-domestic solar power regulators and high-frequency power supplies. 
Figure 5. Appearance of the SiC Power Module
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