MALVERN, PA — May 15, 2013 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced the launch of its new high-speed 850nm infrared transmitter, the VSMG10850 and the 940nm infrared transmitter, the VSMB10940. and a matching package to 780nm 1050nm radiation sensitive high-speed silicon PIN photodiode --- VEMD10940F ~, expanding its optoelectronics combination. These devices feature an ultra-wide half-height angle of ±75° and a small-sized side-view surface mount package measuring 3mm x 2mm and a height of only 1mm.
These infrared emitters, released today, are available in a clear, colorless package with a typical illumination intensity of 1 mW/sr at 20 mA, 33% higher than similar devices on the market, and a switching time of only 15 ns. The 940nm VSMB10940 uses GaAIAs multi-quantum well technology with a typical forward voltage of 1.3V; the 850nm VSMG10850 uses a double heterogeneous technology with a forward voltage of 1.4V.
The VEMD10940F photodiode has a daylight filter that matches 830nm to 950nm IR emitters such as VSMG10850 and VSMB10940. The device has a reverse photocurrent of 3μA, a dark current of 1nA, a peak sensitivity of 920nm, and a photocurrent temperature coefficient as low as 0.1%/K.
The VSMG10850, VSMB10940 and VEMD10940F are low profile and are suitable for use in infrared touch panels for printer displays, e-book readers, smartphones, tablets, ultrabooks and GPS navigators. The device can be stored in the workshop for 168 hours, and the moisture sensitivity level reaches the level 3 specified by J-STD-020. The transmitter and photodiode support lead-free reflow soldering and meet Vishay 's green standards.
Samples and production quantities of the new infrared emitters and photodiodes are available now, with lead times ranging from six weeks to eight weeks.
ShenZhen Haofa Metal Precision Parts Technology Co., Ltd. , https://www.haofametals.com