Voltage breakdown refers to the breakdown of a semiconductor PN junction or insulating dielectric layer under overvoltage. In modern VLSI circuits, the thickness of the gate oxide layer has been as thin as nanometers, and the electrostatic voltage as small as nearly one hundred volts or tens of volts is enough to make components fail or degrade their performance.
The main source of overvoltage is triboelectricity. When a person walks into the room or just takes the integrated circuit out of the plastic bag material, it may generate a voltage of 15,000-20,000V, far exceeding the static destruction voltage. Taking the MOS field effect transistor as an example, a metal aluminum gate, an insulating dielectric layer SIO2, and a semiconductor N-channel, this structure is equivalent to a plate capacitor with a capacitance of about 3PF.
When static charge accumulates on the aluminum grid, it is known from V = Q / C that even a small amount of charge will cause the voltage to rise very high. The withstand voltage value of the insulating dielectric layer SIO2 is only about 100V. When the electrostatic voltage reaches or exceeds the withstand voltage value, the oxide film will be broken down, causing pinholes to connect the engineering plastic pump grid trench, damage the device, and cause hidden danger Or make the device invalid.
Power breakdown refers to the breakdown of semiconductor PN junctions, insulating dielectric layers, connecting wires, etc. under overcurrent, and it is related to the shape, duration and energy accumulation of electrostatic discharge pulses. The static discharge current flowing through the integrated circuit causes the temperature of the PN junction to rise.
Some may burn the internal connection wires or cause the internal connection wires to become narrow, some may cause alloying or cause metal diffusion, and eventually cause permanent damage or severe aging of the device. Electrical aging is the most "soft breakdown" of headaches. It could not be found at the time, but it may fail at any time afterwards. At this time, the electronic equipment using it will undoubtedly bring great hidden dangers.
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